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| SMT Multi TOPLED(R) SFH 331 3.0 2.6 2.3 2.1 0.8 0.6 2 C E 1 Package marking Emission color : super-red 4 3 0.1 typ 2.1 1.7 0.9 0.7 (2.4) A 3.4 3.0 C 1.1 0.5 3.7 3.3 0.18 0.12 0.6 0.4 GPL06924 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type SFH 331 Bestellnummer Ordering Code Q62702-P1634 Wesentliche Merkmale q Geeignet fur Vapor-Phase Loten und IR-Reflow Loten Features q Suitable for vapor-phase and IR-reflow soldering Semiconductor Group 1 1997-11-01 SFH 331 Grenzwerte Maximum Ratings Bezeichnung Description Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom (LED) Forward current (LED) Kollektorstrom (Transistor) Collector current (Transistor) Stostrom Surge current t 10 s, D = 0.005 Sperrspannung (LED) Reverse voltage (LED) Kollektor-Emitter Spannung (Transistor) Collector-emitter voltage (Transistor) Verlustleistung Total power dissipation Symbol Symbol LED Wert Value Transistor - 55 ... + 100 - 55 ... + 100 + 100 - 15 75 C Einheit Unit Top Tstg Tj IF IC - 55 ... + 100 - 55 ... + 100 + 100 30 - 500 C C mA mA mA IFM VR VCE 5 - 100 - 35 165 V V mW Ptot Warmewiderstand Sperrschicht/Umgebung Thermal resistance junction/ambient Montage auf PC-Board* Rth JA 2) (Padgroe 16 mm mounting on pcb* (pad size 16 mm 2) Sperrschicht / Lotstelle Rth JS junction / soldering joint * PC-board: G30/FR4 450 450 K/W 350 - K/W Notes Die angegebenen Grenzdaten gelten fur den Chip, fur den sie angegeben sind, unabhangig vom Betriebszustand des anderen. The stated max. ratings refer to the specified chip regardless of the operating status of the other one. Semiconductor Group 2 1997-11-01 SFH 331 Kennwerte LED (TA = 25 C) Characteristics LED Bezeichnung Description Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 10 mA Dominantwellenlange Dominant wavelength IF = 10 mA Symbol Symbol (typ.) peak (typ.) (typ.) dom (typ.) Wert Value 635 Einheit Unit nm 628 nm Spektrale Bandbreite bei 50 % Irel max (typ.) Spectral bandwidth at 50 % Irel max (typ.) IF = 10 mA Abstrahlwinkel bei 50 % IV (Vollwinkel) Viewing angle at 50 % IV Durchlaspannung Forward voltage IF = 10 mA Sperrstrom Reverse current VR = 5 V Kapazitat Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tp = 10 s, RL = 50 Lichtstarke (Gruppe JK) Luminous intensity (group JK) IF = 10 mA 2 45 nm 120 2.0 2.6 0.01 10 12 Grad degr. V V A A pF (typ.) VF (max.) VF (typ.) IR (max.) IR (typ.) C0 (typ.) tr (typ.) tf (typ.) IV 300 150 6 (4.0 ... 12.5) ns ns mcd Semiconductor Group 3 1997-11-01 SFH 331 Kennwerte Fototransistor (TA = 25 oC, = 950 nm) Characteristics Phototransistor Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Symbol Symbol S max Wert Value 860 380 ... 1150 Einheit Unit nm nm Bestrahlungsempfindliche Flache ( 240 m) A Radiant sensitive area ( 240 m) Abmessung der Chipflache Dimensions of chip area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 25 V, E = 0 Fotostrom Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V Anstiegszeit/Abfallzeit Rise time/Fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = 5 A, Ee = 0.1 mW/cm2 LxB H 0.045 0.45 x 0.45 0.5 ... 0.7 mm2 mm x mm mm CCE 60 5.0 Grad degr. pF ICEO 1 ( 200) nA IPCE 16 A tr, tf 7 s VCEsat 150 mV Semiconductor Group 4 1997-11-01 SFH 331 LED Radiation characteristics Irel = f () Phototransistor Directional characteristics Srel = f () 40 30 20 10 0 OHL01660 1.0 50 0.8 0.6 60 0.4 70 0.2 80 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 0 LED Relative spectral emission Irel = f (), TA = 25 C, IF = 20 mA V () = Standard eye response curve 100 % rel 80 OHL02350 V 60 40 20 super-red 0 400 450 500 550 600 650 nm 700 Semiconductor Group 5 1997-11-01 SFH 331 Forward current IF = f (VF) TA = 25 C 10 2 OHL02351 Rel. luminous intensity IV / IV(10 mA) = f (IF), TA = 25 C 10 1 V V(10mA) 10 0 OHL02316 Perm. pulse handling capability IF = f (tp) Duty cycle D = parameter, TA = 25 C 10 3 OHL01686 F mA F mA tP D= tP T T F 10 1 5 super-red 10 0 5 5 super-red D = 0.005 0.01 0.02 0.05 0.1 10 2 0.2 10 -1 5 5 10 5 -2 0.5 DC 10 -1 1.0 1.4 1.8 2.2 2.6 3.0 V 3.4 VF 10 -3 10 -1 5 10 0 5 10 1 mA 10 F 2 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 s 10 1 tp Max. permissible forward current IF = f (TA) F 60 mA 50 OHL01661 Wavelength at peak emission peak = f (TA), IF = 20 mA 690 OHL02104 Dominant wavelength dom = f (TA) IF = 20 mA 690 OHL02105 peak nm 650 dom nm 650 super-red 630 630 orange 610 610 yellow 590 570 550 orange yellow green pure-green 0 20 40 60 80 C 100 super-red 40 30 20 590 10 570 550 green pure-green 0 0 20 40 60 80 C 100 TA 0 20 40 60 80 C 100 TA TA Forward current VF = f (TA) IF = 10 mA 2.4 OHL02106 Rel. luminous intensity IV / IV(25 C) = f (TA), IF = 10 mA 2.0 V V (25 C) 1.6 OHL02150 VF V 2.2 2.0 green super-red orange yellow 1.2 yellow green 1.8 0.8 pure-green orange super-red pure-green 1.6 0.4 1.4 0 20 40 60 80 C 100 0.0 0 20 40 60 80 C 100 TA TA Semiconductor Group 6 1997-11-01 SFH 331 Phototransistor Rel. spectral sensitivity Srel = f () 100 OHF01121 Photocurrent IPCE = f (VCE), Ee = Parameter PCE 10 0 mA OHF01529 Dark current ICEO = f (VCE), E = 0 CEO 10 1 nA OHF01527 S rel % 80 mW 12 cm 0.5 mW cm 2 mW cm 2 10 0 60 10 -1 0.25 10 -1 mW 0.1 2 cm 40 10 -2 20 0 400 600 800 1000 nm 1200 10 -2 0 5 10 15 20 25 30 V 35 V CE 10 -3 0 5 10 15 20 25 30 V 35 V CE Total power dissipation Ptot = f (TA) 200 mW OHF00871 Capacitance CCE = f (VCE), f = 1 MHz, E = 0 5.0 OHF01528 Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V PCE 25 1.4 1.2 PCE 1.6 OHF01524 C CE pF 4.0 3.5 P tot 160 120 3.0 2.5 1.0 0.8 0.6 0.4 80 2.0 1.5 40 1.0 0.5 0.2 0 -25 0 0 20 40 60 80 C 100 TA 0 10 -2 10 -1 10 0 10 1 V 10 2 V CE 0 25 50 75 C 100 TA Dark current ICEO = f (TA), VCE = 5 V, E = 0 CEO 10 3 nA OHF01530 Photocurrent IPCE = f (Ee), VCE = 5 V 10 3 A OHF01924 PCE 10 2 10 2 10 1 10 1 4 3 2 10 0 10 0 10 -1 -25 0 25 50 75 C 100 TA 10 -1 -3 10 10 -2 mW/cm 2 10 0 Ee Semiconductor Group 7 1997-11-01 |
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